The back surface field in a solar silicon wafer is created through a process called diffusion. In this process, a dopant impurity is diffused into the back surface of the wafer, creating a layer with an opposite charge carrier type compared to the rest of the wafer. This creates a built-in electric field at the back surface, which helps in reducing recombination of charge carriers and improving the overall efficiency of the solar cell.
The back surface field in a solar silicon wafer is created by diffusing a dopant, usually boron, onto the rear surface of the wafer. This process forms a p-n junction, which generates an electric field that helps to separate the photogenerated electrons and holes, thereby enhancing the efficiency and performance of the solar cell.
The back surface field in a solar silicon wafer is created by introducing a dopant material, usually boron, to the back surface of the wafer. This dopant material forms a p-type layer, creating a high concentration of positive charge carriers near the surface. This creates a built-in electric field that helps to separate the generated electron-hole pairs towards the front surface of the wafer, improving the efficiency of the solar cell.
