In the silicon surface cleaning, there is a final step, the silicon chip into the 4% concentration of HF solution soak for five minutes, to hydrogen passivation treatment, and then rinse with deionized water after nitrogen drying,What is the role and mechanism of this hydrogen passivation?
Wire cut damage layer thickness of 10 microns.Generally use 20% alkali solution in the corrosion condition at 90 C
When the concentration of NaOH is higher than 20%W/V, the corrosion rate depends mainly on the temperature of the solution, but not on the actual concentration of the alkali solution.Removal of surface oxide layer on silicon wafer by HF:
0.5 ~ 1min in order to achieve the effect of removing the damage layer, at this timeCorrosion rate can reach 6 to 10um/min.In the polishing process to remove the damage layer on the basis to try to reduce, to prevent corrosion of the wafer was too thin.
