I would like to ask what the purpose of the use of semiconductor silicon wafers, doped with boron ah?
PN junction has a single conductivity, semiconductor rectifier is made of the characteristics of the PN junction. Such as: large scale integrated circuit is under the high temperature for the impurity required in a certain way (thermal diffusion and ion implantation) incorporated into the silicon wafer surface layer, and make it reach the required quantity and distribution, manufacturing a PN junction, interconnect and ohmic contact to complete.
High purity silicon wafers for use in electronics and solar energy are required to be doped with boron to manufacture the P end of the P - N junction, in which P (P) - N (As) -, Ga (B) - gallium (III) indium (III) - silicon.
Another important property of PN junction is illuminated to produce electromotive force, said the photovoltaic effect, can be used for the manufacture of solar battery. Semiconductor transistor, SCR, PN junction photosensitive devices and light-emitting diodes and other semiconductor devices are used in the PN junction photovoltaic characteristics.Boron ratio of gallium and indium has a price advantage, source of advantage, but difficult to extract high purity boron, China electronic with high purity boron in 04 years ago are imported from abroad at high price is not necessarily a seller, but now there is a China called Puri extension of high-tech enterprises to produce high purity boron powder. Can be found in Baidu.
