What is the surface hardness of monocrystalline silicon and polycrystalline silicon wafers
When the contact depth is above 60NM, silicon wafer contact stiffness and contact depth of a linear relationship between the hardness and elastic modulus remained unchanged, the measured value of hardness and elastic modulus of silicon, are about 12.5GPa and 165.6GPa.
At this time, the hardness and elastic modulus of the oxide layer on the surface of monocrystalline silicon wafer were measured, which were about 10.2 GPa and 140.3 GPa, respectively. When the contact depth is about 32 ~ 60NM, silicon wafer contact stiffness and contact depth into a non linear relation between the hardness and elastic modulus increased sharply with the contact depth, show that the hardness and elastic modulus of monocrystalline silicon oxide film surface layer is affected by the matrix material.
When the contact depth is about 20 ~ 32nm, the contact stiffness and the contact depth of the single crystal silicon wafer are linear,
