LED from chip to epitaxial, substrate, and then to the final packaging process
The substrate refers to the sapphire, crystal rod, or silicon, which is sliced and cleaned, and there is no other process. Also called substrate.
The specific process is substrate structure design buffer layer growth N type GaN layer growth multi quantum well luminescence layer growth P type GaN layer growth annealing detection (photoluminescence, X ray) epitaxial sliceChips are the final process, further processed on epitaxial wafers.The specific process is epitaxial wafer cleaning, plating, transparent electrode layer and the transparent electrode pattern, corrosion, to glue, dry etching, lithography, graphic platform to glue, annealing, deposition, photolithography, SiO2 window, SiO2 glue, N corrosion to photolithography, pre cleaning, coating, stripping, annealing, P polar pattern, coating, stripping, grinding, cutting, chip and finished product testing.
Epitaxial sheet refers to the MOCVD processed film.The basic principle is: in the epitaxial growth of a substrate is heated to a suitable temperature (including SiC, Si, and sapphire), InGaAlP is in the control of gaseous substances transported to the surface of the substrate, the growth of specific single crystal films.
