Process flow of wafer wafer ultrasonic cleaning machine?
Plasma wafer cleaning parameters:Residual plasma cleaning method of particles 1, silicon wafer surface, which comprises the following steps: firstly, gas flushing process, and then the gas plasma glow; the use of either gas from the 02, Ar, N2; gas washing process parameters set process: the chamber pressure of 10-40 mTorr, process gas flow 100-500sccm time, 1-5s; process parameters of starting process is: the chamber pressure of 1040 mTorr, process gas flow on the electrode 100-500sccm, power 250-400W, time 1-10s.2, as described in the plasma cleaning method, the invention is characterized in that the gas used is 23, plasma cleaning method, which is characterized in that the process parameters of gas flushing process is: the chamber pressure of 15 mTorr, process gas flow 300sccm, time 3S; process parameters of starting process is: the chamber pressure of 15 mTorr, process gas flow on the electrode 300sccm, power 300W, time Ss.4, plasma cleaning method, which is characterized in that the process parameters of gas flushing process is: the chamber pressure of 10-20 mTorr, process gas flow 100-300sccm, time 1-5s; process parameters of starting process is: the chamber pressure of 10-20 mTorr, process gas flow on the electrode 100-300sccm, power 250-400W, when Lu 1-5s.
Plasma cleaning relates to the field of etching technology, and fully satisfies the removal of residual surface of silicon wafer after etching processKeep particle cleaningBackground technologyIn the etching process, the particles come from many sources: etching gas such as Cl2, HBr, CF4 etc. are corrosive, etching after the end will have a certain number of particles on the surface of the silicon wafer reaction chamber; a quartz cover will produce quartz particles in plasma bombardment; reaction chamber liner (liner) also metal particles will be produced in the etching process for long time. The surface residual silicon etching after particles block conductive connection, cause damage to the device. Therefore, the control of particles is very important in the etching process.
Plasma cleaning method, which is characterized in that the process parameters of gas flushing process is: the chamber pressure of 15 mTorr, process gas flow 300sccm, time 3S; process parameters of starting process is: the chamber pressure of 15 mTorr, process gas flow on the electrode 300sccm, power 300W, time Ss
Solar silicon wafer surface plasma cleaning processResidual plasma cleaning method of particles on silicon wafer surface, which comprises the following steps: firstly, gas flushing process, and then the gas plasma glow. The plasma cleaning method for removing particles of silicon surface easy control, thorough cleaning, no residual reactants, the process gas, non-toxic, low cost, small amount of labor, work efficiency high.
