Doping and Diffusion Principle in Solar Cell Processing
In some inorganic solid compounds doped with different metal ions, can be different properties of luminescent materials, such as yttrium oxide (III) doped with europium (III) ions can be red fluorescent materials.
Doping in semiconductors refers to the incorporation of phosphorus or gallium in semiconductor silicon to obtain n-type or p-type semiconductor materials, thereby fabricating a wide variety of semiconductor devices.
In the solar silicon, the impurity atoms of the gas source close to the silicon, after heating, so that the gradual diffusion of impurities will slowly penetrate the silicon wafer, the concentration from the edge of the silicon to the inside is gradually reduced.
The doping of semiconductors mainly relies on the principle of ion diffusion from high concentrations like low concentrations.
