The mechanism, performance and application characteristics of photon detectors and photothermal detectors are compared
Photothermal effect and photon effect is completely different. The detecting element absorption of radiation energy, does not directly cause the internal electronic state changes, but the absorbed light energy into the energy of thermal motion of the lattice, caused by detector temperature rise, temperature rise and the electrical properties of the detection element or other physical properties change so. Photothermal effect and single photon energy, the size of H is not directly related.
The photon effect is a kind of photoelectric effect properties of single photon has direct effect on the optoelectronic detector. After absorbing photons directly caused by the internal electronic states of atoms or molecules. The change of the size of the photon energy, the size of internal electronic state changes directly influence. Because, the photon energy is h, h is the Planck constant that is the optical frequency, so the effect of photon frequency showed selectivity in photon and electron interactions directly under the condition, the response speed is generally faster.
In principle, no selective photothermal effect on the light frequency. Only in the infrared materials, high absorption rate, thermal effect is more strongly, so it is widely used in detection of infrared radiation. Because temperature rise is the heat accumulation effect, so the response speed of the photothermal effect is generally slow, they can be easily influenced by environmental temperature change.
