It is said that monocrystalline silicon, polycrystalline silicon wafer cutting requirements and problems are still quite a lot of
During the cutting process, the wafer quality and rate of finished products played a major role in the grain type, viscosity of silicon carbide powder cutting fluid and particle size, the viscosity of mortar, mortar flow, steel wire speed and wire tension and workpiece feed speed.TTV: and TTV stria stria and is a headache in the wafer processing, from time to time there will be a knife, impossible to guard against. TTV is when the knife into the line, and is easy to appear in the time line bow.
3, with line (intensive line): because the grinding ability of mortar mortar or not slicing machine loop system, caused by the silicon dense line region.4, because the hydraulic cutting machine: dislocation line clamping device surface residual glue mortar and other foreign matter or pallet, causing the hydraulic device and the plate can not be completely clamped, and plate screw loosening, resulting.
1, the impurity line caused by impurities in polycrystalline silicon ingot, slicing process can not completely remove the lead line on a silicon wafer.2, scratch line caused by mortar in large SIC particles or caking mortar. In the process of cutting, SIC particles stuck in between steel wire and silicon can not overflow, cause.Forms: including the whole line and half line marks, concave line, shiny, more narrow than the other.
