The different types of junctions formed on solar silicon wafers include p-n junctions, heterojunctions, and back surface field junctions.
There are primarily two types of junctions formed on solar silicon wafers: p-n junctions and heterojunctions. P-n junctions are formed by doping one side of the silicon wafer with a material that introduces an excess of electrons (n-type) and the other side with a material that introduces a deficiency of electrons (p-type). This creates a junction where the excess electrons from the n-type side diffuse to the p-type side, resulting in a built-in electric field that allows for the generation of electricity when exposed to sunlight.
Heterojunctions, on the other hand, are formed by depositing a layer of a different semiconductor material, such as amorphous silicon or cadmium telluride, on top of the silicon wafer. This allows for the formation of a more efficient junction with improved performance and reduced energy losses. Heterojunction solar cells are known for their high conversion efficiency and are often used in advanced solar panel technologies.
There are primarily three types of junctions formed on solar silicon wafers: p-n junctions, heterojunctions, and interdigitated back contact (IBC) junctions. P-n junctions are the most common, formed by doping one side of the wafer with a p-type material and the other side with an n-type material. Heterojunctions involve the use of different semiconductor materials to create the junction, typically combining silicon with a thin layer of another material like amorphous silicon or copper indium gallium selenide (CIGS). IBC junctions, on the other hand, have both the p-type and n-type regions on the same side of the wafer, allowing for improved efficiency and reduced shading.
